2008-03-25 BFP540 1 1 2 3 4 npn silicon rf transistor ? for highest gain low noise amplifier at 1.8 ghz ? outstanding g ms = 21.5 db noise figure f = 0.9 db ? gold metallization for high reliability ? sieget ? 45 - line ? pb-free (rohs compliant) package 1) ? qualified according aec q101 esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package BFP540 ats 1=b 2=e 3=c 4=e - - sot343 maximum ratings parameter symbol value unit collector-emitter voltage t a > 0c t a 0c v ceo 4.5 4 v collector-emitter voltage v ces 14 collector-base voltage v cbo 14 emitter-base voltage v ebo 1 collector current i c 80 ma base current i b 8 total power dissipation 2) t s 77c p tot 250 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 1 pb-containing package may be available upon special request 2 t s is measured on the collector lead at the soldering point to the pcb
2008-03-25 BFP540 2 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 290 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 4.5 5 - v collector-emitter cutoff current v ce = 14 v, v be = 0 i ces - - 10 a collector-base cutoff current v cb = 5 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 0.5 v, i c = 0 i ebo - - 10 a dc current gain i c = 20 ma, v ce = 3.5 v, pulse measured h fe 50 110 185 - 1 for calculation of r thja please refer to application note thermal resistance
2008-03-25 BFP540 3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 50 ma, v ce = 4 v, f = 1 ghz f t 21 30 - ghz collector-base capacitance v cb = 2 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.14 0.24 pf collector emitter capacitance v ce = 2 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.33 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 0.65 - noise figure i c = 5 ma, v ce = 2 v, f = 1.8 ghz, z s = z sopt i c = 5 ma, v ce = 2 v, f = 3 ghz, z s = z sopt f - - 0.9 1.3 1.4 - db power gain, maximum stable 1) i c = 20 ma, v ce = 2 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ms - 21.5 - db power gain, maximum available 1) i c = 20 ma, v ce = 2 v, z s = z sopt , z l = z lopt , f = 3 ghz g ma - 16 - db transducer gain i c = 20 ma, v ce = 2 v, z s = z l = 50 ? , f = 1.8 ghz f = 3 ghz | s 21e | 2 16 - 18.5 14.5 - - db third order intercept point at output 2) v ce = 2 v, i c = 20 ma, z s = z l =50 ? , f = 1 . 8 ghz ip 3 - 24.5 - dbm 1db compression point at output i c = 20 ma, v ce = 2 v, z s = z l =50 ? , f = 1 . 8 ghz p -1db - 11 - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ), g ms = | s 21e / s 12e | 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
2008-03-25 BFP540 4 spice parameter (gummel-poon model, berkley-spice 2g.6 syntax): transistor chip data: is = 82.84 aa vaf = 28.383 v ne = 3.19 - var = 19.705 v nc = 1.172 - rbm = 1.3 ? cje = 1.8063 ff tf = 6.76 ps itf = 1ma vjc = 0.81969 v tr = 2.324 ns mjs = 0- xti = 3- bf = 107.5 - ikf = 0.48731 a br = 5.5 - ikr = 0.02 a rb = 5.4 ? re = 0.31111 - vje = 0.8051 v xtf = 0.4219 - ptf = 0 deg mjc = 0.30232 - cjs = 0 ff xtb = 0 - fc = 0.73234 nf = 1- ise = 11.15 fa nr = 1- isc = 19.237 aa irb = 0.72983 ma rc = 4 ? mje = 0.46576 - vtf = 0.23794 v cjc = 234 ff xcjc = 0.3 - vjs = 0.75 v eg = 1.11 ev tnom 300 k all parameters are ready to use, no scalling is necessary. package equivalent circuit: l bi = 0.47 nh l bo = 0.53 nh l ei = 0.23 nh l e o = 0.05 nh l c i = 0.56 nh l eo = 0.58 nh c be = 136 ff c c b = 6.9 ff c ce = 134 ff valid up to 6ghz for examples and ready to use parameters please contact your local infineon technologies distributor or sales office to obtain a infineon technologies cd-rom or see internet: http//www.infineon.com/silicondiscretes for non-linear simulation: ? use transistor chip parameters in berkeley spice 2g.6 syntax for all simulators. ? simulation of the package is not necessary for frequencies < 100mhz. for higher frequencies please add the wiring of the package equivalent circuit around the non-linear transistor.
2008-03-25 BFP540 5 total power dissipation p tot = ? ( t s ) 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot permissible pulse load r thjs = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 collector-base capacitance c cb = ? ( v cb ) f = 1mhz 0 0.5 1 1.5 2 2.5 3 v 4 v cb 0 0.05 0.1 pf 0.2 c cb
2008-03-25 BFP540 6 third order intercept point ip 3 = ? ( i c ) (output, z s =z l =50 ? ) v ce = parameter, f = 1.8ghz 0 10 20 30 40 50 60 70 80 ma 100 i c 2 4 6 8 10 12 14 16 18 20 22 24 26 dbm 30 ip 3 1v 1.5v 2v 3v 4v transition frequency f t = ? ( i c ) f = 1ghz v ce = parameter in v 0 10 20 30 40 50 60 70 ma 90 i c 0 5 10 15 20 25 ghz 35 f t 0.5 1 1.5 2 3 4 power gain g ma , g ms = ? ( i c ) v ce = 2v f = parameter in ghz 0 10 20 30 40 50 60 70 ma 90 i c 0 5 10 15 20 db 30 g 1 2 3 4 5 6 power gain g ma , g ms = ? ( f ), | s 21 |2 = f (f) v ce = 2v, i c = 20ma 0 1 2 3 4 ghz 6 g 5 10 15 20 25 30 35 40 db 50 i c |s21|2 gms gma
2008-03-25 BFP540 7 power gain g ma , g ms = ? ( v ce ) i c = 20ma f = parameter in ghz 0 0.5 1 1.5 2 2.5 3 v 4 v ce 0 5 10 15 20 db 30 g 1 2 3 4 5 6 noise figure f = ? ( i c ) v ce = 2v, z s = z sopt 0 10 20 30 40 50 60 ma 80 i c 0 0.5 1 1.5 2 2.5 3 db 4 f f = 6ghz f = 5ghz f = 4ghz f = 3ghz f = 2.4ghz f = 1.8ghz f = 0.9ghz noise figure f = ? ( i c ) v ce = 2v, f = 1.8ghz 0 10 20 30 40 50 60 ma 80 i c 0 0.5 1 1.5 2 2.5 3 db 4 f zs = 50ohm zs = zsopt noise figure f = ? ( f ) v ce = 2v, z s = z sopt 0 1 2 3 4 ghz 6 f 0 0.5 1 1.5 2 db 3 f ic = 20ma ic = 5ma
2008-03-25 BFP540 8 source impedance for min. noise figure vs. frequency v ce = 2v, i c = 5ma / 20ma 100 +j10 -j10 50 +j25 -j25 25 +j50 -j50 10 +j100 -j100 0 0.9ghz 1.8ghz 2.4ghz 3ghz 4ghz 5ghz 6ghz 5ma 20ma
2008-03-25 BFP540 9 package sot343 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel 2005, june date code (ym) bga420 type code 0.2 4 2.15 8 2.3 1.1 pin 1 0.6 0.8 1.6 1.15 0.9 1.25 0.1 0.1 max. 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 2 0.2 0.1 0.9 12 3 4 a +0.1 0.6 a m 0.2 1.3 -0.05 -0.05 0.15 0.1 m 4x 0.1 0.1 min. pin 1 manufacturer
2008-03-25 BFP540 10 edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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